STGW60H65FB Series

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Catalog

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Part	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Switching Energy	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	IGBT Type	Supplier Device Package	Package / Case	Mounting Type	Current - Collector Pulsed (Icm)	Test Condition
STMicroelectronics STGW60H65FB	80 A	51 ns 160 ns	175 °C	-55 °C	2.3 V	306 nC	1.09 mJ 626 µJ	375 W	650 V	Trench Field Stop	TO-247	TO-247-3	Through Hole	240 A	5 Ohm 15 V 60 A 400 V

Catalog

Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

Description

This device is an IGBT developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.