STPSC12065 Series
Manufacturer: STMicroelectronics
650 V POWER SCHOTTKY SILICON CARBIDE DIODE
| Part | Reverse Recovery Time (trr) | Mounting Type | Package / Case | Capacitance @ Vr, F | Speed | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Average Rectified (Io) | Technology | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 0 ns | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 750 pF | 500 mA | 150 µA | 650 V | -40 °C | 175 ░C | 12 A | SiC (Silicon Carbide) Schottky | D2PAK | 1.45 V |
STMicroelectronics | 0 ns | Through Hole | TO-220-2 | 750 pF | 500 mA | 150 µA | 650 V | -40 °C | 175 ░C | 12 A | SiC (Silicon Carbide) Schottky | TO-220AC | 1.45 V |
STMicroelectronics | 0 ns | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 750 pF | 500 mA | 150 µA | 650 V | -40 °C | 175 ░C | 12 A | SiC (Silicon Carbide) Schottky | D2PAK | 1.45 V |