LT1160 Series

Half-/Full-Bridge N-Channel Power MOSFET Drivers

Catalog

Half-/Full-Bridge N-Channel Power MOSFET Drivers

Part	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Number of Drivers	Mounting Type	Gate Type	Package / Case [x]	Package / Case [y]	Package / Case	Supplier Device Package	Current - Peak Output (Source, Sink)
Analog Devices LT1160CS#PBF	Independent	15 V	10 VDC	Half-Bridge	60 ns	130 ns	0.8 V 2 V	0 °C	125 ¯C	Non-Inverting	2	Surface Mount	N-Channel MOSFET	0.154 in	3.9 mm	14-SOIC	14-SO	1.5 A 1.5 A
Analog Devices LT1160IS#TRPBF	Independent	15 V	10 VDC	Half-Bridge	60 ns	130 ns	0.8 V 2 V	-40 °C	125 ¯C	Non-Inverting	2	Surface Mount	MOSFET (N-Channel) N-Channel MOSFET	0.154 in	3.9 mm	14-SOIC	14-SO	1.5 A 1.5 A
Analog Devices LT1160CS#TRPBF	Independent	15 V	10 VDC	Half-Bridge	60 ns	130 ns	0.8 V 2 V	0 °C	125 ¯C	Non-Inverting	2	Surface Mount	N-Channel MOSFET	0.154 in	3.9 mm	14-SOIC	14-SO	1.5 A 1.5 A
Analog Devices LT1160CN#PBF	Independent	15 V	10 VDC	Half-Bridge	60 ns	130 ns	0.8 V 2 V	0 °C	125 ¯C	Non-Inverting	2	Through Hole	N-Channel MOSFET	0.3 "	7.62 mm	14-DIP		1.5 A 1.5 A

Catalog

Half-/Full-Bridge N-Channel Power MOSFET Drivers

Key Features

• Floating Top Driver Switches Up to 60V

• Drives Gate of Top N-Channel MOSFET above Load HV Supply

• 180ns Transition Times Driving 10,000pF

• Adaptive Nonoverlapping Gate Drives Prevent Shoot-Through

• Top Drive Protection at High Duty Cycles

• TTL/CMOS Input Levels

• Undervoltage Lockout with Hysteresis

• Operates at Supply Voltages from 10V to 15V

• Separate Top and Bottom Drive Pins

Description

The LT1160/LT1162 are cost effective half-/full-bridge N-channel power MOSFET drivers. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) rail of up to 60V.The internal logic prevents the inputs from turning on the power MOSFETs in a half-bridge at the same time. Its unique adaptive protection against shoot-through currents eliminates all matching requirements for the two MOSFETs. This greatly eases the design of high efficiency motor control and switching regulator systems.During low supply or start-up conditions, the undervoltage lockout actively pulls the driver outputs low to prevent the power MOSFETs from being partially turned on. The 0.5V hysteresis allows reliable operation even with slowly varying supplies.The LT1162 is a dual version of the LT1160 and is available in a 24-pin PDIP or in a 24-pin SO Wide package.ApplicationsPWM of High Current Inductive LoadsHalf-Bridge and Full-Bridge Motor ControlSynchronous Step-Down Switching Regulators3-Phase Brushless Motor DriveHigh Current Transducer DriversClass D Power Amplifiers