Catalog
80 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
80 V, N-channel Trench MOSFET
80 V, N-channel Trench MOSFET
| Part | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Package / Case | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Mounting Type | Grade | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Qualification | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | MOSFET (Metal Oxide) | 20 V | 80 V | 215 pF | -55 °C | 175 ░C | 7.2 nC | 4.5 V 10 V | N-Channel | 6-UDFN Exposed Pad | 2.7 V | 2 W 15 W | Surface Mount | Automotive | 1.9 A 5.1 A | DFN2020MD-6 | AEC-Q101 | 230 mOhm |