APTGLQ200A120T3AG-Module Series

1200V/Three level inverter/IGBT modules

Catalog

1200V/Three level inverter/IGBT modules

Part	Vce(on) (Max) @ Vge, Ic	Input Capacitance (Cies) @ Vce	IGBT Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Package / Case	Configuration	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
Microchip Technology APTGLQ200A120T3AG	2.4 V	9.3 nF	Trench Field Stop	SP3F	1200 V	1250 W	Module	2 Independent	Chassis Mount	400 A	-40 C	175 °C	Standard
Microchip Technology APTGLQ200H120G	2.4 V	12.3 nF	Trench Field Stop	SP6	1200 V	1000 W	SP6	Full Bridge	Chassis Mount	350 A	-40 C	175 °C	Standard
Microchip Technology APTGLQ200H65G	2.3 V	12.2 nF	Trench Field Stop	SP6		680 W	Module	Full Bridge	Chassis Mount	270 A	-40 C	175 °C	Standard	75 µA	650 V
Microchip Technology APTGLQ200HR120G	2.4 V	9.2 nF	Trench Field Stop	SP6	1200 V	1000 W	SP6		Through Hole		-40 C	175 °C	Standard	200 µA

Catalog

1200V/Three level inverter/IGBT modules

Key Features

• + Configuration: Three level inverter

• + VCES (V): 1200

• + VCESat (V): 2.05

• + Current (A) Tc=80C: 200

• + Silicon type: TRENCH 4 FAST

• + Package: SP6C

Description

* IGBT 3 fast * Low voltage drop * Low leakage current * Low switching losses * Kelvin emitter for easy drive * Low stray inductance * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Internal thermistor for temperature monitoring (optional) * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant