HMC1099PM5E Series

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier

Catalog

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier

Part	Frequency [Max]	Frequency [Min]	Noise Figure	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Mounting Type	Package / Case	Current - Supply	RF Type	Gain	Test Frequency [Max]	Test Frequency [Min]	For Use With/Related Products	Supplied Contents	Type
Analog Devices HMC1099PM5E	1.1 GHz	10 MHz	5 dB	24 V	30 VDC	32-LFCSP-CAV	5	5	Surface Mount	32-LFQFN Exposed Pad CSP	100 mA	General Purpose	18 dBi	1.1 GHz	800 MHz
Analog Devices EV1HMC1099LP5D	1.1 GHz	10 MHz														HMC1099LP5DE	Board(s)	Amplifier

Catalog

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier

Key Features

• High small signal gain: 20 dB typical

• POUT: 41.5 dBm typical at PIN= 27 dBm

• High PAE: 60% typical at PIN= 27 dBm

• Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all frequencies

• Supply voltage: VDD= 28 V at a quiescent current of 100 mA

• Internal prematchingSimple and compact external tuning for optimal performance

• Simple and compact external tuning for optimal performance

• 5 mm × 5 mm, 32-lead LFCSP

Description

The HMC1099PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 69% PAE across an instantaneous bandwidth of 0.01 GHz to 1.1 GHz, and with a ±0.5 dB typical gain flatness.The HMC1099PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.The HMC1099PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.Multifunction pin names may be referenced by their relevant function only.ApplicationsExtended battery operation for public mobile radiosPower amplifier stage for wireless infrastructuresTest and measurement equipmentCommercial and military radarsGeneral-purpose transmitter amplification