MSC400SMA330 Series

3300V Silicon Carbide (SiC) MOSFET

Catalog

3300V Silicon Carbide (SiC) MOSFET

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology MSC400SMA330B4	520 mOhm	TO-247-4	N-Channel	579 pF	Through Hole	23 V	-10 V	TO-247-4	3300 V	131 W	2.97 V	37 nC	11 A	-55 °C	150 °C

Catalog

3300V Silicon Carbide (SiC) MOSFET

Key Features

- Low capacitances and low gate charge

- Fast switching speed due to low internal gage resistance (ESR)

- Stable operation at high junction temperature, TJ(max) = 150°C

- Fast and reliable body diode

- Superior avalanche ruggedness

- RoHS Compliant

Description

MSC400SMA330 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.