STH145N8F7-2AG Series

Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

Catalog

Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

Part	Power Dissipation (Max)	Package / Case	Mounting Type	FET Type	Qualification	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Grade	Vgs (Max)
STMicroelectronics STH145N8F7-2AG	200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	AEC-Q101	4.5 V	6340 pF	80 V	10 V	4 mOhm	H2Pak-2	MOSFET (Metal Oxide)	96 nC	175 °C	-55 °C	90 A	Automotive	20 V

Catalog

Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.