STB11 Series

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package

Catalog

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	FET Type	Package / Case	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STB11NK40ZT4	10 V	150 °C	-55 °C	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	110 W	930 pF	32 nC	D2PAK	9 A	4.5 V	MOSFET (Metal Oxide)	400 V	550 mOhm
STMicroelectronics STB11NM60FDT4	10 V			Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V			40 nC	D2PAK	11 A	5 V	MOSFET (Metal Oxide)	600 V	450 mOhm	900 pF
STMicroelectronics STB11NM80T4	10 V	150 °C	-65 °C	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	150 W			D2PAK	11 A	5 V	MOSFET (Metal Oxide)	800 V	400 mOhm	1630 pF	43.6 nC
STMicroelectronics STB11NM60T4	10 V	150 °C	-65 °C	Surface Mount	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V		1000 pF		D2PAK	11 A	5 V	MOSFET (Metal Oxide)	650 V	450 mOhm		30 nC

Catalog

N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package

Description

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.