STB100 Series

N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package

Catalog

N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STB100N6F7	30 nC	60 V	1980 pF	175 °C	-55 °C	N-Channel	MOSFET (Metal Oxide)	10 V	5.6 mOhm	125 W	Surface Mount	4 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	100 A
STMicroelectronics STB100N10F7	61 nC	100 V		175 °C	-55 °C	N-Channel	MOSFET (Metal Oxide)	10 V		150 W	Surface Mount	4.5 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V		4369 pF

Catalog

N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package

Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.