ADRF5023 Series

Silicon SPDT Switch, Nonreflective , 9 kHz to 45 GHz

Catalog

Silicon SPDT Switch, Nonreflective , 9 kHz to 45 GHz

Part	Operating Temperature [Max]	Operating Temperature [Min]	RF Type	Topology	Circuit	Test Frequency	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Isolation	Frequency Range [Max]	Frequency Range [Min]	IIP3	Insertion Loss	Impedance	Supplier Device Package	Package / Case	Features
Analog Devices ADRF5023BCCZN-R7	85 °C	-40 °C	5G Cellular VSAT	Absorptive	SPDT	45 GHz	3.45 V	3.15 V	Surface Mount	42 dB	45 GHz	9 kHz	53 dBm	1.7 dB	50 Ohms	20-LGA (3x3)	20-VFLGA Exposed Pad	DC Blocked
Analog Devices ADRF5023BCCZN	85 °C	-40 °C		Absorptive	SPDT	45 GHz	3.45 V	3.15 V	Surface Mount	42 dB	45 GHz	9 kHz	53 dBm	1.7 dB	50 Ohms	20-LGA (3x3)	20-VFLGA Exposed Pad	DC Blocked

Catalog

Silicon SPDT Switch, Nonreflective , 9 kHz to 45 GHz

Key Features

• Ultra-wideband frequency range: 9 kHz to 45 GHz

• Nonreflective design

• Low insertion loss0.9 dB typical to 18 GHz1.6 dB typical to 40 GHz1.7 dB typical to 45 GHz

• 0.9 dB typical to 18 GHz

• 1.6 dB typical to 40 GHz

• 1.7 dB typical to 45 GHz

• High Isolation: 42 dB typical to 45 GHz

• High input linearity:0.1 dB power compression (P0.1dB): 31 dBmThird-order intercept (IP3): 53 dBm

• 0.1 dB power compression (P0.1dB): 31 dBm

• Third-order intercept (IP3): 53 dBm

• High power handling at TCASE= 85°C30 dBm through path24 dBm terminated path30 dBm hot switching (RFC port)

• 30 dBm through path

• 24 dBm terminated path

• 30 dBm hot switching (RFC port)

• RF settling time (0.1 dB final RF output): 3.5 μs

• No low-frequency spurious signals

• All off state control

• Positive Control Interface: CMOS-/LVTTL-compatible

• 20-lead, 3.0 mm × 3.0 mm LGA package

Description

The ADRF5023 is a nonreflective, single-pole double-throw (SPDT) switch manufactured in the silicon process.The ADRF5023 operates from 9 kHz to 45 GHz with a typical insertion loss of 1.7 dB and isolation of 42 dB. The device has a RF input power handling capability of 30 dBm for the through path, 24 dBm for the terminated path, and 30 dBm for the hot switching at the RF common port.The ADRF5023 requires a positive supply of 3.3 V and a negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5023 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance is derated. See Table 2 in the data sheet for more details.The ADRF5023 is pin-compatible with the ADRF5022, a fast switching version that operates from 100 MHz to 45 GHz.The ADRF5023 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.APPLICATIONSTest and instrumentationCellular Infrastructure: 5G millimeter waveMilitary radios, radars, and electronic countermeasures (ECMs)Microwave radios and very small aperture terminals (VSATs)Industrial scanner