SCTH40N120G2V-7 Series
Manufacturer: STMicroelectronics
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SILICON CARBIDE POWER MOSFET 1200 V, 62 MOHM TYP., 36 A IN AN H2PAK-7 PACKAGE
| Part | Vgs (Max) [Max] | Vgs (Max) [Min] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 22 V | -10 V | 100 mOhm | 1.2 kV | 4.9 V | 175 °C | -55 °C | N-Channel | 61 nC | 36 A | Surface Mount | 1233 pF | 18 V | H2PAK-7 |