1N6311 Series

Catalog

DIODE ZENER 3V 500MW DO35

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Qualification	Mounting Type	Voltage - Zener (Nom) (Vz)	Impedance (Max) (Zzt) [Max]	Grade	Package / Case	Tolerance
Microchip Technology JAN1N6311	30 µA	1.4 V	500 mW	175 ░C	-65 °C	DO-204AH (DO-35)	MIL-PRF-19500/533	Through Hole	3 V	29 Ohms	Military	Axial DO-204AH DO-35	5 %
Microchip Technology JANTX1N6311	30 µA	1.4 V	500 mW	175 ░C	-65 °C	DO-204AH (DO-35)	MIL-PRF-19500/533	Through Hole	3 V	29 Ohms	Military	Axial DO-204AH DO-35	5 %
Microchip Technology JAN1N6311CUS	30 µA	1.4 V	500 mW	175 ░C	-65 °C	B SQ-MELF	MIL-PRF-19500/533	Surface Mount	3 V	29 Ohms	Military	B SQ-MELF	2 %
Microchip Technology JANTX1N6311US	30 µA	1.4 V	500 mW	347 °F	-65 ░C	B SQ-MELF	MIL-PRF-19500/533	Surface Mount	3 V	29 Ohms	Military	B SQ-MELF	5 %
Microchip Technology JAN1N6311C	30 µA	1.4 V	500 mW	175 ░C	-65 °C	DO-204AH (DO-35)	MIL-PRF-19500/533	Through Hole	3 V	29 Ohms	Military	Axial DO-204AH DO-35	2 %
Microchip Technology JANS1N6311CUS	30 µA	1.4 V	500 mW	175 ░C	-65 °C	B SQ-MELF	MIL-PRF-19500/533	Surface Mount	3 V	29 Ohms	Military	B SQ-MELF	2 %
Microchip Technology JANTXV1N6311DUS	30 µA	1.4 V	500 mW	175 ░C	-65 °C	B SQ-MELF	MIL-PRF-19500/533	Surface Mount	3 V	29 Ohms	Military	B SQ-MELF	1 %
Microchip Technology 1N6311	30 µA	1.4 V	500 mW	347 °F	-65 ░C	DO-204AH (DO-35)		Through Hole	3 V	29 Ohms		Axial DO-204AH DO-35	5 %
Microchip Technology JAN1N6311DUS	30 µA	1.4 V	500 mW	175 ░C	-65 °C	B SQ-MELF	MIL-PRF-19500/533	Surface Mount	3 V	29 Ohms	Military	B SQ-MELF	1 %
Microchip Technology JANS1N6311CUS/TR	30 µA	1.4 V	500 mW	175 ░C	-65 °C	B SQ-MELF	MIL-PRF-19500/533	Surface Mount	3 V	29 Ohms	Military	B SQ-MELF	2 %