Catalog
0 Hz/DC to 18 GHz, DPDT, MEMS Switch
Key Features
• DC to 18 GHz frequency range
• High bit rate capability up to 64 Gbps
• Low insertion loss:
• 0.5 dB (typical) at 8 GHz
• 1.0 dB (typical) at 16 GHz
• High Input IIP3: 73 dBm (typical)
• High RF power handling: 33 dBm (maximum)
• On-resistance: 1.9 Ω (typical)
• High DC current handling: 200 mA
• High switch cycle count: 100 million cycles (minimum)
• Fast switching time: 200 μs TON (typical)
• Integrated 3.3 V driver for simple control with parallel interface and SPI
• Space-saving integrated passive including decoupling and shunt resistors
• Small 5 mm × 4 mm × 1 mm, 24-lead plastic package
• Temperature range: −40°C to +85°C
Description
AI
The ADGM1121 is a wideband, double-pole, double-throw (DPDT) switch, fabricated using Analog Devices' microelectromechanical system (MEMS) switch technology. This technology enables a small form factor, wide RF bandwidth, highly linear and low insertion loss switch that is operational down to 0 Hz/DC, making it an ideal solution for a wide range of RF and precision equipment switching needs.An integrated driver chip generates a high voltage to electrostatically actuate switch that can be controlled by a parallel interface and a serial peripheral interface (SPI). All switches are independently controllable.The device is packaged in a 24-lead, 5 mm × 4 mm × 1 mm land grid array (LGA) package. To ensure optimum operation of the ADGM1121, see the Critical Operational Requirements section of the data sheet.The on-resistance (RON) performance of the ADGM1121 is affected by part-to-part variation, channel-to-channel variation, cycle actuations, settling time post turn on, bias voltage, and temperature changes.APPLICATIONSATE load and probe boardsDC with high speed loopback testingHigh speed SerDes, PICe Gen4/5, USB4, PAM4Relay replacementsReconfigurable filters/attenuatorsMilitary and microwave radiosCellular infrastructure: 5G mm wave
