APTMC60 Series

Catalog

MOSFET 4N-CH 1200V 28A SP3

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology APTMC60TL11CT3AG	950 pF	49 nC	150 °C	-40 °C	4 N-Channel (Three Level Inverter)	1200 V	1.2 kV	28 A	125 W	SP3	2.2 V	Silicon Carbide (SiC)	98 mOhm	Chassis Mount	SP3
Microchip Technology APTMC60TLM55CT3AG	1900 pF		150 °C	-40 °C	4 N-Channel (Three Level Inverter)	1200 V	1.2 kV	48 A	250 W	SP3	2 mA 2.2 V	Silicon Carbide (SiC)	49 mOhm	Chassis Mount	SP3	98 nC
Microchip Technology APTMC60TLM14CAG		483 nC	150 °C	-40 °C	4 N-Channel (Three Level Inverter)	1200 V	1.2 kV	219 A	925 W	SP6	2.4 V	Silicon Carbide (SiC)	12 mOhm	Chassis Mount	SP6		8400 pF