STU16N65M2 Series

N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package

Catalog

N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Technology
STMicroelectronics STU16N65M2	150 °C	-55 °C	25 V	110 W	11 A	N-Channel	4 V	10 V	19.5 nC	650 V	Through Hole	IPAK	TO-251	IPAK TO-251-3 Short Leads TO-251AA	360 mOhm	MOSFET (Metal Oxide)

Catalog

N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.