STW9N150 Series

N-channel 1500 V, 1.8 Ohm typ., 8 A PowerMESH Power MOSFET in a TO-247 package

Catalog

N-channel 1500 V, 1.8 Ohm typ., 8 A PowerMESH Power MOSFET in a TO-247 package

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
STMicroelectronics STW9N150	5 V	3255 pF	150 °C	-55 °C	Through Hole	30 V	1500 V	TO-247-3	2.5 Ohm	10 V	TO-247-3	MOSFET (Metal Oxide)	N-Channel	89.3 nC	8 A	320 W

Catalog

N-channel 1500 V, 1.8 Ohm typ., 8 A PowerMESH Power MOSFET in a TO-247 package

Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics.