MSC017SMA120 Series

1200V, 17 mOhm, Discrete mSiC™ MOSFET

Catalog

1200V, 17 mOhm, Discrete mSiC™ MOSFET

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Mounting Type	Supplier Device Package	Package / Case	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Microchip Technology MSC017SMA120B4	1200 V	N-Channel	2.7 V	249 nC	113 A	5280 pF	-55 °C	175 ░C	455 W	Through Hole	TO-247-4	TO-247-4	-10 V	22 V	22 mOhm
Microchip Technology MSC017SMA120J	1200 V	N-Channel	2.7 V	249 nC	88 A	5280 pF	-55 °C	175 ░C			SOT-227		-10 V	23 V	22 mOhm	278 W
Microchip Technology MSC017SMA120S	1200 V	N-Channel	2.7 V	249 nC	100 A	5280 pF	-55 °C	175 ░C		Surface Mount	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-10 V	22 V	22 mOhm	357 W

Catalog

1200V, 17 mOhm, Discrete mSiC™ MOSFET

Key Features

- Low capacitances and low gate charge

- Fast switching speed due to low internal gage resistance (ESR)

- Stable operation at high junction temperature at 175 °C

- Fast and reliable body diode

- Superior avalanche ruggedness

- RoHS Compliant

Description

MSC017SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.