JANTXV2N2484P-Transistor-PIND Series

NPN Silicon Low-Power 60V, 0.05A

Catalog

NPN Silicon Low-Power 60V, 0.05A

Part	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Power - Max [Max]	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Current - Collector (Ic) (Max) [Max]	Transistor Type	Supplier Device Package	Supplier Device Package
Microchip Technology JANTXV2N2484P	Through Hole	300 mV	60 V	TO-18-3 Metal Can TO-206AA	360 mW	MIL-PRF-19500/376	250	Military	50 mA	NPN	TO-18	TO-206AA

Catalog

NPN Silicon Low-Power 60V, 0.05A

Key Features

- The device packages for the encapsulated device types are as follows: (2N2484) (similar to TO-18), and surfacemount (UA, UB, UBC, UBN, and UBCN) .

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/376.

Description

This specification covers the performance requirements for NPN, silicon, low-power 2N2484 transistor. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/376. Two levels of product assurance (JANHC, JANKC) are provided for die. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.