STH170N8F7-2 Series

N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package

Catalog

N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package

Part	Package / Case	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STH170N8F7-2	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	250 W	N-Channel	120 A	Surface Mount	20 V	H2Pak-2	4.5 V	10 V	3.7 mOhm	MOSFET (Metal Oxide)	80 V	120 nC	175 °C	-55 °C	8710 pF

Catalog

N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.