STW10N95K5 Series

N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package

Catalog

N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs
STMicroelectronics STW10N95K5	150 °C	-55 °C	950 V	10 V	N-Channel	TO-247-3	8 A	22 nC	Through Hole	130 W	5 V	MOSFET (Metal Oxide)	630 pF	TO-247-3	30 V	800 mOhm

Catalog

N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package

Description

These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.