MSC180SMA120 Series

1200V, 180 mOhm, Discrete mSiC™ MOSFET

Catalog

1200V, 180 mOhm, Discrete mSiC™ MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	FET Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology MSC180SMA120B	5 V 20 V	147 W	Through Hole	36 nC	TO-247-3	1200 V	TO-247-3	21 A	530 pF	4.5 V	MOSFET (Metal Oxide)	N-Channel	23 V	-10 V	225 mOhm	-55 °C	175 ░C

Catalog

1200V, 180 mOhm, Discrete mSiC™ MOSFET

Key Features

- Low capacitances and low gate charge

- Fast switching speed due to low internal gage resistance (ESR)

- Stable operation at high junction temperature, TJ(max) = 175°C

- Fast and reliable body diode

- Superior avalanche ruggedness

- RoHS Compliant

Description

MSC180SMA120 is part of our newest family of mSiCTM MOSFET devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.