Catalog
0 Hz/DC to 34 GHz, SPDT MEMS Switches
Key Features
• ADGM1001: DC to 34 GHz
• Insertion loss0.8 dB (typical) at 18 GHz1.5 dB (typical) at 34 GHz
• 0.8 dB (typical) at 18 GHz
• 1.5 dB (typical) at 34 GHz
• IIP3: 76 dBm (typical)
• Maximum RF power: 33 dBm
• On resistance: 3.4 Ω (typical)
• Maximum dc current: 200 mA
• Actuation lifetime: 100 million cycles (minimum)
• On switching time (tON): 200 μs (typical)
• Integrated 3.3 V driver for simple control with parallel and SPI
• Independently controllable switches
• Space-saving integrated passive components
• Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package
• Temperature range: –40°C to +85°C
Description
AI
The ADGM1001/ADGM1002/ADGM1003is a wideband, single-pole, two-throw (SP2T) switch, fabricated using Analog Devices, Inc., micro-electromechanical system (MEMS) switch technology. This technology enables a small form factor, wide RF bandwidth, highly linear, low insertion loss switch that is operational down to 0 Hz/dc, making it an ideal solution for a wide range of RF and precision equipment switching needs. The device is packaged in a 24-lead, 5.00 mm × 4.00 mm × 0.90 mm, land grid array (LGA) package.An integrated control chip generates the high voltage necessary to electrostatically actuate the switch via a complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible parallel interface. All switches are independently controllable.Multifunction pin names may be referenced by their relevant function only.ADGM1001/ADGM1002/ADGM1003 Key SpecificationsModelBandwidthMaximum RF Power (dBm)DC Signal Range (V)Maximum DC Current (mA)ADGM1001DC to 34 GHz33±6200ADGM1002DC to 20 GHz30±5150ADGM1003DC to 16 GHz27±375APPLICATIONSATE load and probe boardsDC and high speed loop back testingRelay replacementsReconfigurable filters and attenuatorsMilitary and microwave radiosCellular infrastructure: 5G mmWaveSupports digital standards: PCIe Gen4/Gen5/Gen6, USB 3 and USB 4, and PAM 4
