APTM10DSKM09T3G-Module Series

100V/Asymmetrical bridge/Si Mosfet modules

Catalog

100V/Asymmetrical bridge/Si Mosfet modules

Part	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]	Configuration
Microchip Technology APTM10SKM05TG	N-Channel	5 mOhm	100 V	780 W	20000 pF	4 V	700 nC	150 °C	-40 °C	SP4	278 A	30 V	Chassis Mount	MOSFET (Metal Oxide)	10 V	SP4
Microchip Technology APTM10UM01FAG	N-Channel		100 V	2500 W	60000 pF	4 V		150 °C	-40 °C	SP6	860 A	30 V	Chassis Mount	MOSFET (Metal Oxide)	10 V	SP6	1.6 mOhm	2100 nC
Microchip Technology APTM10TAM19FPG		21 mOhm	100 V		5100 pF			150 °C	-40 °C	SP6-P	70 A		Chassis Mount	MOSFET (Metal Oxide)		SP6		200 nC	6 N-Channel (3-Phase Bridge)	208 W
Microchip Technology APTM10TAM09FPG		10 mOhm	100 V		9875 pF	4 V	350 nC	150 °C	-40 °C	SP6-P	139 A		Chassis Mount	MOSFET (Metal Oxide)		SP6			6 N-Channel (3-Phase Bridge)	390 W
Microchip Technology APTM10HM09FT3G		10 mOhm	100 V		9875 pF	4 V	350 nC	150 °C	-40 °C	SP3	139 A		Chassis Mount	MOSFET (Metal Oxide)		SP3				390 W	4 N-Channel
Microchip Technology APTM10AM05FTG		5 mOhm	100 V		20000 pF	4 V	700 nC	150 °C	-40 °C	SP4	278 A		Chassis Mount	MOSFET (Metal Oxide)		SP4			2 N-Channel (Half Bridge)	780 W
Microchip Technology APTM10DHM05G		5 mOhm	100 V		20000 pF	4 V	700 nC	150 °C	-40 °C	SP6	278 A		Chassis Mount	MOSFET (Metal Oxide)		SP6			2 N-Channel (Dual) Asymmetrical	780 W
Microchip Technology APTM10DSKM09T3G		10 mOhm	100 V		9875 pF	4 V	350 nC	150 °C	-40 °C	SP3	139 A		Chassis Mount	MOSFET (Metal Oxide)		SP3			2 N-Channel (Dual)	390 W

Catalog

100V/Asymmetrical bridge/Si Mosfet modules

Key Features

• * Configuration: Asymmetrical bridge

• * VDSS (V): 100

• * RDSon (mR) typ: 4.5

• * Current (A) Tc=80C: 207

• * Silicon type: MOSFET

• * Package: SP6C

Description

* FREDFETs * Low RDSon * Low input and Miller capacitance * Low gate charge * Fast intrinsic reverse diode * Avalanche energy rated * Very rugged * Kelvin source for easy drive * Low stray inductance * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Internal thermistor for temperature monitoring (optional) * RoHS Compliant