TPS1101 Series

Single P-channel Enhancement-Mode MOSFET

Catalog

Single P-channel Enhancement-Mode MOSFET

Part	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Texas Instruments TPS1101DR	MOSFET (Metal Oxide)	1.5 V	90 mOhm	791 mW	8-SOIC	3.9 mm	0.154 in	P-Channel	150 °C	-40 °C	2 V	-15 V	2.3 A	15 V	2.7 V 10 V	8-SOIC	Surface Mount	11.25 nC
Texas Instruments TPS1101D	MOSFET (Metal Oxide)	1.5 V	90 mOhm	791 mW	8-SOIC	3.9 mm	0.154 in	P-Channel	150 °C	-40 °C	2 V	-15 V	2.3 A	15 V	2.7 V 10 V	8-SOIC	Surface Mount	11.25 nC

Catalog

Single P-channel Enhancement-Mode MOSFET

Key Features

• Low rDS(on). . . 0.09Typ at VGS= -10 V3 V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th)= -1.5 V MaxAvailable in Ultrathin TSSOP Package (PW)ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015Low rDS(on). . . 0.09Typ at VGS= -10 V3 V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th)= -1.5 V MaxAvailable in Ultrathin TSSOP Package (PW)ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015

Description

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM process. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on)and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers. The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages. The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM process. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on)and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers. The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages.