GP3D010 Series
Manufacturer: SemiQ
DIODE SIL CARB 1.2KV 10A TO247-2
| Part | Technology | Capacitance @ Vr, F | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Mounting Type | Speed | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ | SiC (Silicon Carbide) Schottky | 608 pF | 10 A | 0 ns | Through Hole | 500 mA | TO-247-2 | 175 ░C | -55 °C | TO-247-2 | 1.2 kV | 20 µA | 1.65 V | |
SemiQ | SiC (Silicon Carbide) Schottky | 419 pF | 10 A | 0 ns | Through Hole | 500 mA | TO-220-2 | 175 ░C | -55 °C | TO-220-2 | 650 V | 25 µA | 1.6 V |