
MIC4428 Series
Manufacturer: Microchip Technology

IC GATE DRVR LOW-SIDE 8SOIC
| Part | Channel Type | Supplier Device Package | Current - Peak Output (Source, Sink) | Number of Drivers | Voltage - Supply [Max] | Voltage - Supply [Min] | Gate Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Input Type | Mounting Type | Driven Configuration | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case [y] | Package / Case [x] | Package / Case [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | Independent | 8-SOIC | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Surface Mount | Low-Side | 150 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in | |||
Microchip Technology | Independent | 8-MSOP | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Surface Mount | Low-Side | 150 °C | -40 °C | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | |||
Microchip Technology | Independent | 8-PDIP | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Through Hole | Low-Side | 150 °C | 0 °C | 8-DIP | 0.3 in | 7.62 mm | |||
Microchip Technology | Independent | 8-SOIC | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Surface Mount | Low-Side | 150 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in | |||
Microchip Technology | Independent | 8-SOIC | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Surface Mount | Low-Side | 150 °C | 0 °C | 8-SOIC | 3.9 mm | 0.154 in | |||
Microchip Technology | Independent | 8-SOIC | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Surface Mount | Low-Side | 150 °C | 0 °C | 8-SOIC | 3.9 mm | 0.154 in | |||
Microchip Technology | Independent | 8-PDIP | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Through Hole | Low-Side | 150 °C | -40 °C | 8-DIP | 0.3 in | 7.62 mm | |||
Microchip Technology | Independent | 8-SOIC | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Surface Mount | Low-Side | 150 °C | 0 °C | 8-SOIC | 3.9 mm | 0.154 in | |||
Microchip Technology | Independent | 8-SOIC | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Surface Mount | Low-Side | 150 °C | 0 °C | 8-SOIC | 3.9 mm | 0.154 in | |||
Microchip Technology | Independent | 8-SOIC | 1.5 A 1.5 A | 2 | 18 V | 4.5 V | N-Channel P-Channel MOSFET | 29 ns | 20 ns | Inverting Non-Inverting | Surface Mount | Low-Side | 150 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in |