APTCV50H60T3G-Module Series

600V/Full bridge/Si Mosfet modules

Catalog

600V/Full bridge/Si Mosfet modules

Part	Vce(on) (Max) @ Vge, Ic	Mounting Type	Configuration	Package / Case	Input	NTC Thermistor	Current - Collector (Ic) (Max) [Max]	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Input Capacitance (Cies) @ Vce	Supplier Device Package
Microchip Technology APTCV50H60T3G	1.9 V	Chassis Mount	Full Bridge	SP3	Standard		80 A	NPT Trench Field Stop	150 °C	-40 °C	600 V	176 W	250 µA	3.15 nF	SP3

Catalog

600V/Full bridge/Si Mosfet modules

Key Features

• + Configuration: Full bridge

• + VDSS (V): 600

• + RDSon (mR) typ: 45

• + Current (A) Tc=80C: 50

• + Silicon type: Super Junction Mosfet/TRENCH

• + Package: SP3F

Description

* Super junction MOSFET * Ultra low RDSon * Low Miller capacitance * Ultra low gate charge * Avalanche energy rated * IGBT3 * Low voltage drop * Low tail current * Switching frequency up to 20 kHz * Low leakage current * Kelvin source for easy drive * Low stray inductance * Internal thermistor for temperature monitoring (optional) * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * RoHS Compliant