Catalog
GaAs, MMIC, Fundamental Mixer, 3 GHz to 10 GHz
Key Features
• Conversion loss: 9 dB typical at 3 GHz to 9 GHz
• Local oscillator (LO) to radio frequency (IF) isolation: 43 dB typical at 3 GHz to 9 GHz
• RF to intermediate frequency (IF) isolation: 26 dB typical at 3 GHz to 9 GHz
• Input third-order intercept (IP3): 24 dBm typical at 3 GHz to 9 GHz
• Input 1 dB compression point (P1dB): 17 dBm typical at 3 GHz to 9 GHz
• Input second-order intercept (IP2): 67 dBm typical at 3 GHz to 9 GHz
• Passive double-balanced topology
• Wide IF frequency range: dc to 4 GHz
• 12-terminal, ceramic, leadless chip carrier (LCC) package
• Conversion loss
• 8 dB typical for 3 GHz to 7 GHz
• 10 dB typical for 7 GHz to 10 GHz
• LO to IF isolation
• 44 dB typical for 3 GHz to 7 GHz
• 42 dB typical for 7 GHz to 10 GHz
• RF to IF isolation
• 21 dB typical for 3 GHz to 7 GHz
• 32 dB typical for 7 GHz to 10 GHz
• Input IP3
• 22 dBm typical for 3 GHz to 7 GHz
• 28 dBm typical for 7 GHz to 10 GHz
• Input P1dB
• 15 dBm typical for 3 GHz to 7 GHz
• 17 dBm typical for 7 GHz to 10 GHz
• Passive double balanced topology
• Wide IF frequency range: dc to 4 GHz
• 6-pad, bare die [CHIP]
Description
AI
HMC787ALC3BThe HMC787A is a general-purpose, double balanced mixer in a 12-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package that can be used as an upconverter or down- converter from 3 GHz to 10 GHz. This mixer is fabricated in a gallium arsenide (GaAs), metal semiconductor field effect transistor (MESFET) process and requires no external components or matching circuitry. The HMC787A provides excellent local oscillator (LO) to radio frequency (RF) and LO to intermediate frequency (IF) isolation due to optimized balun structures and operates with a LO drive level of 17 dBm. The ceramic LCC package eliminates the need for wire bonding and is compatible with high volume, surface-mount manufacturing techniques.HMC787AG (CHIP)The HMC787AG is a general-purpose, double balanced mixer that can be used as an upconverter or downconverter from 3 GHz to 10 GHz. This mixer is fabricated in a gallium arsenide (GaAs), metal semiconductor field effect transistor (MESFET) process and requires no external components or matching circuitry.The HMC787AG provides high local oscillator (LO) to RF and LO to intermediate frequency (IF) isolation due to optimized balun structures and operates with a LO drive level between 13 dBm to 21 dBm.ApplicationsMicrowave RadioIndustrial, scientific, and medical (ISM) band and ultrawide band (UWB) radioTest equipment & sensorsMilitary end use
