STR2P3LLH6 Series

P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package

Catalog

P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package

Part	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case
STMicroelectronics STR2P3LLH6	Surface Mount	P-Channel	4.5 V 10 V	150 °C	2 A	639 pF	56 mOhm	350 mW	20 V	MOSFET (Metal Oxide)	SOT-23-3	30 V	6 nC	2.5 V	SC-59 SOT-23-3 TO-236-3

Catalog

P-Channel 30 V, 0.048 Ohm typ., 2 A STripFET H6 Power MOSFET in a SOT-23 package

Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.