SCTL90N65G2V Series
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
Manufacturer: STMicroelectronics
Catalog
Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
| Part | Package / Case | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) [Max] | Vgs (Max) [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 4-PowerVDFN 8-PowerVDFN | 5 V | 935 W | Surface Mount | N-Channel | 650 V | 3380 pF | 22 V | -10 V | 157 nC | 175 °C | -55 °C | 18 V | PowerFlat™ (8x8) HV | 24 mOhm |
Description
AI
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.