2N2905AE3-Transistor-RoHS Series

PNP Silicon Switching -40 to - 60V, -0.6A

Catalog

PNP Silicon Switching -40 to - 60V, -0.6A

Part	Current - Collector Cutoff (Max) [Max]	Transistor Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type
Microchip Technology 2N2905AE3	1 µA	PNP	800 mW	60 V	TO-39 (TO-205AD)	1.6 V	100	TO-205AD TO-39-3 Metal Can	600 mA	Through Hole

Catalog

PNP Silicon Switching -40 to - 60V, -0.6A

Key Features

- The device package outline for this specification sheet is similar to TO-39 for all encapsulated device types.

Description

This specification covers the performance requirements for PNP, silicon, switching 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A and 2N2905AL transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/290. Provision for radiation hardness assurance (RHA) to eight radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices which have passed RHA requirements.