1N5809URS-UFR-Recitifer-Diode Series

Diode 100V, 3A Surface Mount A, SQ-MELF

Catalog

Diode 100V, 3A Surface Mount A, SQ-MELF

Part	Reverse Recovery Time (trr)	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Speed	Capacitance @ Vr, F
Microchip Technology 1N5809URS/TR	30 ns	Surface Mount	3 A	100 V	5 µA	B SQ-MELF	Standard	175 ░C	-65 C	B SQ-MELF	200 mA 500 ns	60 pF

Catalog

Diode 100V, 3A Surface Mount A, SQ-MELF

Key Features

- JEDEC registered surface mount equivalent of1N5802, 1N5804, 1N5806 series.

- Voidless hermetically sealed glass package.

- Quadruple-layer passivation.

- Extremely robust construction.

- Internal "Category 1" metallurgical bonds.

- JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477.

- RoHS compliant versions available (commercial grade only).

Description

This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal "Category 1" metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.