HMC8402-DIE Series

2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier

Catalog

2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier

Part	Gain	Current - Supply	RF Type	Mounting Type	Package / Case	Frequency [Min]	Frequency [Max]	Noise Figure	Voltage - Supply	Supplier Device Package
Analog Devices HMC8402-SX	13.5 dB	68 mA	VSAT	Surface Mount	Die	2 GHz	30 GHz	2 dB	7 V	Die

Catalog

2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier

Key Features

• Output power for 1 dB compression (P1dB): 21.5 dBm typical

• Saturated output power (PSAT): 22 dBm typical

• Gain: 13.5 dB typical

• Noise figure: 2 dB

• Output third order intercept (IP3): 26 dBm typical

• Supply voltage: 7 V at 68 mA

• 50 Ω matched input/output

• Die size: 2.7 mm × 1.363 mm × 0.05 mm

Description

The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of output power at 1 dB gain compression while requiring 68 mA from a 7 V supply. The HMC8402 is self biased with only a single positive supply needed to achieve a drain current IDQof 68 mA.The HMC8402 amplifier input/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).APPLICATIONSTest instrumentationMicrowave radios and very small aperture terminals (VSATs)Military and spaceTelecommunications infrastructureFiber optics