STD25N10F7 Series

N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET F7 Power MOSFET in DPAK package

Catalog

N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET F7 Power MOSFET in DPAK package

Part	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STD25N10F7	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	40 W	14 nC	N-Channel	175 °C	-55 °C	4.5 V	MOSFET (Metal Oxide)	DPAK	20 V	920 pF	10 V	25 A

Catalog

N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET F7 Power MOSFET in DPAK package

Description

These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.