HMC943ALP5DE Series

>1.5 W (34 dBm), 24 GHz to 34 GHz, GaAs, pHEMT, MMIC, Power Amplifier

Catalog

>1.5 W (34 dBm), 24 GHz to 34 GHz, GaAs, pHEMT, MMIC, Power Amplifier

Part	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Frequency [Min]	Frequency [Max]	Gain	Package / Case	RF Type	Current - Supply	P1dB	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Voltage - Supply
Analog Devices HMC943APM5ETR	32-LFCSP-CAV	5	5	24 GHz	34 GHz	23 dBi	32-LFQFN Exposed Pad CSP	VSAT	1.3 A	33 dBm	Surface Mount	6 V	4 V
Analog Devices HMC943APM5E	32-LFCSP-CAV	5	5	24 GHz	34 GHz	23 dBi	32-LFQFN Exposed Pad CSP	VSAT	1.3 A	33 dBm	Surface Mount	6 V	4 V
Analog Devices HMC943ALP5DETR	32-LFCSP-CAV	5	5	24 GHz	34 GHz	23 dBi	32-LFQFN Exposed Pad CSP	VSAT	1.3 A	32 dBm	Surface Mount			5.5 V

Catalog

>1.5 W (34 dBm), 24 GHz to 34 GHz, GaAs, pHEMT, MMIC, Power Amplifier

Key Features

• High saturated output power (PSAT): 34 dBm

• High output IP3: 39 dBm

• High gain: 23 dB

• DC supply: 5.5 V at 1300 mA

• No external matching required

• 32-lead, 5 mm × 5 mm LFCSP_CAV package

Description

The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz. The HMC943APM5E provides 23 dB of gain, 34 dBm of saturated output power (PSAT), and 23% power added efficiency (PAE) from a 5.5 V supply. The high output third-order intercept (IP3) of 39 dBm makes the HMC943APM5E ideal for microwave radio applications. A power detector output is also available. The HMC943APM5E amplifier input/outputs (I/Os) are internally matched to 50 Ω. The device is packaged in a leadless, 5 mm × 5 mm, surface-mount LFCSP_CAV package, and requires no external matching components.ApplicationsPoint to point radiosPoint to multipoint radiosMicrowave radios, very small aperture terminals (VSATs), and satellite communications (SATCOM)Military and space