SCTW40N120G2VAG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Grade	Vgs (Max) [Max]	Vgs (Max) [Min]	Qualification	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)
STMicroelectronics SCTW40N120G2VAG	63 nC	HiP247™	18 V	N-Channel	Through Hole	Automotive	22 V	-10 V	AEC-Q101	5 V	200 °C	-55 ░C	1.2 kV	33 A	TO-247-3	1230 pF	290 W

Catalog

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.