STB200N Series

Catalog

MOSFET N-CH 40V 120A D2PAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STB200N4F3	75 nC	4 V	MOSFET (Metal Oxide)	40 V	N-Channel	175 °C	-55 °C	10 V	4 mOhm	20 V	120 A	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5100 pF	300 W	Surface Mount
STMicroelectronics STB200NF04L-1		4 V	MOSFET (Metal Oxide)	40 V	N-Channel	175 °C	-55 °C	5 V 10 V	3.8 mOhm	16 V	120 A	I2PAK	I2PAK TO-262-3 Long Leads TO-262AA	6400 pF	300 W	Through Hole	90 nC