JAN2N5672-Transistor Series

NPN Silicon High-Power 90V to 120V, 30A

Catalog

NPN Silicon High-Power 90V to 120V, 30A

Part	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Grade	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Microchip Technology JAN2N5672	5 V	NPN	Military	TO-204AA TO-3	Through Hole	10 mA	6 W	120 V	30 A

Catalog

NPN Silicon High-Power 90V to 120V, 30A

Key Features

- The device package outline is a TO–204AA (similar to TO-3) for all encapsulated device types.

Description

This specification covers the performance requirements for NPN, silicon, high-power, 2N5671 and 2N5672 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/488.