Catalog
650V, 6A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 6A, THD, Silicon-carbide (SiC) SBD
650V, 6A, THD, Silicon-carbide (SiC) SBD
| Part | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Technology | Speed | Current - Reverse Leakage @ Vr | Supplier Device Package | Package / Case | Current - Average Rectified (Io) | Capacitance @ Vr, F | Operating Temperature - Junction | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 0 ns | 650 V | 1.5 V | SiC (Silicon Carbide) Schottky | 500 mA | 30 µA | TO-220ACFP | TO-220-2 | 6 A | 300 pF | 175 °C | Through Hole |