HMC903LP3E Series
GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 17 GHz
Manufacturer: Analog Devices
Catalog
GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 17 GHz
Key Features
• Low noise figure: 1.7 dB typical at 6 GHz to 16 GHz
• High gain: 18.5 dB typical at 6 GHz to 16 GHz
• Output power for 1 dB compression (P1dB):14.5 dBm typical at 6 GHz to 16 GHz
• Single-supply voltage: 3.5 V at 80 mA typical
• Output third-order intercept (IP3): 25 dBm typical
• 50 Ω matched input/output
• Self biased with optional bias control for IDQreduction
• 16-lead, 3 mm × 3 mm, LFCSP package
Description
AI
The HMC903 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA), which is self biased with the optional bias control for IDQreduction. It operates between 6 GHz and 18 GHz. This LNA provides 19 dB of small signal gain, 1.6 dB noise figure, and an output third-order intercept (IP3) of 27 dBm, requiring only 90 mA of supply current from a 3.5 V supply. The output power for a 1 dB compression (P1dB) of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC903 also features inputs/outputs that are dc blocked and internally matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the HMC903 in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter with bonds of 0.31 mm (12 mil) length.ApplicationsPoint to point radiosPoint to multipoint radiosMilitary and spaceTest instrumentation
