Catalog
0.3 or 0.4 GHz to 6 GHz, 35 W, GaN Power Amplifier
Key Features
• High PSAT: 46 dBm
• High power gain: 20 dB
• High PAE: 38%
• Instantaneous bandwidth: 0.3 GHz to 6 GHz
• Supply voltage: VDD= 50 V at 1300 mA
• 10-lead LDCC package
• High output power: 45.5 dBm typical at PIN= 24 dBm
• High power gain: 22 dB typical at PIN= 24 dBm
• High PAE: 40% typical at PIN= 28 dBm
• Die size: 4.8 mm × 3.4 mm × 0.1 mm
Description
AI
The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadband power amplifier that delivers 45.5 dBm (35 W) with 40% power added efficiency (PAE) across an instantaneous bandwidth of 0.4 GHz to 6 GHz. No external matching is required to achieve full band operation. No external inductor is required to bias the amplifier. In addition, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.APPLICATIONSMilitary jammersCommercial and military radarPower amplifier stage for wireless infrastructureTest and measurement equipment
