MSC2X51SDA120J Series

700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Catalog

700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Part	Technology	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Reverse Recovery Time (trr)	Diode Configuration	Speed	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Current - Average Rectified (Io) (per Diode)
Microchip Technology MSC2X51SDA070J	SiC (Silicon Carbide) Schottky	1.8 V	SOT-227 (ISOTOP®)	0 ns	2 Independent	No Recovery Time	200 µA	700 V	SOT-227-4 miniBLOC	175 ░C	-55 C	Chassis Mount	50 A
Microchip Technology MSC2X51SDA120J	SiC (Silicon Carbide) Schottky	1.8 V	SOT-227 (ISOTOP®)	0 ns	2 Independent	No Recovery Time	200 µA	1.2 kV	SOT-227-4 miniBLOC	175 ░C	-55 C	Chassis Mount	50 A

Catalog

700V Dual Silicon Carbide (SiC) Schottky Barrier Diode (SBD)

Key Features

- No reverse recovery

- Low forward voltage

- Low leakage current

- Avalanche-energy rated

- RoHS compliant

- Isolated voltage to 2500V

Description

MSC2X51SDA120 is part of our newest family of Dual SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.