FDMS86550ET60 Series

N-Channel PowerTrench® MOSFET 60V, 245A, 1.65mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 245A, 1.65mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
ON Semiconductor FDMS86550ET60	8 V 10 V	N-Channel	20 V	154 nC	4.5 V	32 A 245 A	8235 pF	8-PQFN (5x6)	8-PowerTDFN	MOSFET (Metal Oxide)	60 V	Surface Mount	-55 °C	175 ░C	3.3 W 187 W

Catalog

N-Channel PowerTrench® MOSFET 60V, 245A, 1.65mΩ

Key Features

• Extended TJrating to 175°C

• Max rDS(on)= 1.65 mΩ at VGS= 10 V, ID= 32 A

• Max rDS(on)= 2.2 mΩ at VGS= 8 V, ID= 27 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

Description

On Semiconductor’s advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.