Catalog
GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz
Key Features
• Gain: 15 dB
• Saturated Power: +29 dBm
• 28% PAE
• Supply Voltage: +5V
• Power Down Capability
• No External Matching Required
Description
AI
The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.ApplicationsUNIIHiperLAN
