TIP137 Series

Darlington Complementary Silicon Power Transistor

Catalog

Darlington Complementary Silicon Power Transistor

Part	Mounting Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]
ON Semiconductor TIP137	Through Hole	150 °C	1000 hFE	100 V	4 V	TO-220AB	500 çA	2 W	PNP - Darlington	TO-220-3	8 A

Catalog

Darlington Complementary Silicon Power Transistor

Key Features

• High DC Current Gain. hfe=2500 Typ at Ic=4.0 Adc

• Collector-Emitter Sustaining Voltage at 30 mAdc: 80 Vdc Min TIP131 & 100 Vdc Min TIP132, TIP137

• Low Collector-Emitter Saturation Voltage: 2.0 Vdc Max at Ic=4.0 Adc & 3.0 Vdc Max at Ic=6.0 Adc

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors.

• T0-220AB Compact Package

• Pb-Free Packages are Available

Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP131, TIP132 (NPN); and TIP137 (PNP) are complementary devices.