Discrete Semiconductor Products
TIP137
ObsoleteON Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
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Discrete Semiconductor Products
TIP137
ObsoleteON Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TIP137 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 hFE |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-220AB |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 468 | $ 0.64 | |
Description
General part information
TIP137 Series
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP131, TIP132 (NPN); and TIP137 (PNP) are complementary devices.
Documents
Technical documentation and resources