Discrete Semiconductor Products
TIP137
ObsoleteON Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Discrete Semiconductor Products
TIP137
ObsoleteON Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | TIP137 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 hFE |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-220AB, TO-220 |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 3 V, 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
| 3036 | $ 1.83 | |||
| 20727 | $ 0.94 | |||
| Tube | 468 | $ 0.64 | ||
Description
General part information
TIP137
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP131, TIP132 (NPN); and TIP137 (PNP) are complementary devices.
Documents
Technical documentation and resources