STT4P3LLH6 Series

P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in a SOT23-6L package

Catalog

P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in a SOT23-6L package

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STT4P3LLH6	30 V	20 V	2.5 V	MOSFET (Metal Oxide)	150 °C	4.5 V 10 V	P-Channel	SOT-23-6	4 A	Surface Mount	639 pF	SOT-23-6	56 mOhm	6 nC

Catalog

P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in a SOT23-6L package

Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.