STF2HNK60Z Series

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in a TO-220FP package

Catalog

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in a TO-220FP package

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type
STMicroelectronics STF2HNK60Z	20 W	2 A	MOSFET (Metal Oxide)	30 V	15 nC	600 V	Through Hole	TO-220FP	TO-220-3 Full Pack	4.5 V	280 pF	10 V	4.8 Ohm	150 °C	-55 °C	N-Channel

Catalog

N-channel 600 V, 3.5 Ohm typ., 2 A SuperMESH Power MOSFET in a TO-220FP package

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.