1N5818-Schottky-Diode Series

Diode 30V, 1A Through Hole DO-41

Catalog

Diode 30V, 1A Through Hole DO-41

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case
Microchip Technology 1N5818/TR	DO-204AL (DO-41)	1 mA	30 V	Schottky	1 A	200 mA 500 ns	550 mV	Through Hole	150 °C	-55 °C	Axial DO-204AL DO-41
Microchip Technology 1N5818	DO-204AL (DO-41)	1 mA	30 V	Schottky	1 A	200 mA 500 ns	550 mV	Through Hole	150 °C	-55 °C	Axial DO-204AL DO-41

Catalog

Diode 30V, 1A Through Hole DO-41

Key Features

- JEDEC registered 1N5818, 1N5819 and 1N6759 through 1N6761 numbers.

- Hermetically sealed DO-41 glass package.

- Metallurgically bonded.

- \*1N5819-1 and 1N6761-1 only are available in JAN, JANTX, JANTXV and JANS qualifications per MIL-PRF-19500/586. (See part nomenclature for all available options.).

- RoHS compliant versions available (commercial grade only).

- Small size for high density mounting using flexible thru-hole leads (see package illustration).

- Low reverse (leakage) currents.

- Non-sensitive to ESD per MIL-STD-750 test method 1020 (human body model).

- Inherently radiation hard as described in Microchip "MicroNote 050".

Description

This 1 Amp Schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819-1 and 1N6761-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-41 glass package.